Product Summary

The CY62146ELL-45ZSXIT is a high performance CMOS static RAM organized as 256K words by 16 bits. The CY62146ELL-45ZSXIT features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life in portable applications such as cellular telephones. The CY62146ELL-45ZSXIT also has an automatic power down feature that reduces power consumption when addresses are not toggling. Placing the CY62146ELL-45ZSXIT into standby mode reduces power consumption by more than 99% when deselected (CE HIGH).

Parametrics

CY62146ELL-45ZSXIT absolute maximum aratings: (1)Storage temperature: -65 ℃ to +150 ℃; (2)Ambient temperature with; (3)power applied: -55 ℃ to +125 ℃; (4)Supply voltage to ground potential: -0.5 V to 6.0 V; (5)DC voltage applied to outputs: -0.5 V to 6.0 V; (6)DC input voltage: -0.5 V to 6.0 V; (7)Output current into outputs (LOW): 20 mA; (8)Static discharge voltage: >2001 V; (9)Latch-up current: >200 mA.

Features

CY62146ELL-45ZSXIT features: (1)Very high speed: 45 ns; (2)Wide voltage range: 4.5 V to 5.5 V; (3)Ultra low standby power: Typical standby current: 1 μA; Maximum standby current: 7 μA; (4)Ultra low active power: Typical active current: 2 mA at f = 1 MHz; (5)Easy memory expansion with CE and OE features; (6)Automatic power down when deselected; (7)Complementary metal oxide semiconductor (CMOS) for optimum speed and power; (8)Available in Pb-free 44-pin thin small outline package(TSOP)II package.

Diagrams

CY62146ELL-45ZSXIT block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
CY62146ELL-45ZSXIT
CY62146ELL-45ZSXIT

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Data Sheet

0-715: $5.04
715-1000: $4.86
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(USD)
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